mixers - i/q r eceivers - c h i p 2 2 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc570 gaas mmic i/q downconverter 17 - 21 ghz v03.0711 general description features typical applications the h mc 570 is a compact gaas mmic i / q downconverter chip which provides a small signal conversion gain of 10 db with a noise fgure of 3 db and 17 db of image rejection across the frequency band. the device utilizes an lna followed by an image reject mixer which is driven by an active x2 multiplier. the image reject mixer eliminates the need for a flter following the lna, and removes thermal noise at the image frequency. i and q mixer outputs are provided and an external 90 hybrid is needed to select the required sideband. all data shown below is taken with the chip mounted in a 50 ohm test fxture and includes the effects of 1 mil diameter x 20 mil length bond wires on each port. this product is a much smaller alternative to hybrid style image reject mixer downconverter assemblies. electrical specifcations, t a = +25 c, if = 100 mhz, lo = +4 dbm, vdd = 3.5 vdc* parameter m in. typ. m ax. m in. typ. m ax. units frequency r ange, r f 17.7 - 19.7 17 - 21 ghz frequency r ange, lo 7 - 12 7 - 12 ghz frequency r ange, i f d c - 3.5 d c - 3.5 ghz c onversion gain (as irm ) 9 10 9 12 db noise figure 3 4 db i mage r ejection 14 17 14 22 db 1 db c ompression ( i nput) -7 -4 -10 -6 dbm 2 lo to r f i solation 35 40 30 35 db 2 lo to i f i solation 28 30 25 30 db i p3 ( i nput) -5 -2 -6 +3 dbm amplitude balance 0.5 0.5 db phase balance 12 4 deg total s upply c urrent 125 165 125 165 ma *data taken as irm with external i f hybrid functional diagram the h mc 570 is ideal for: ? point-to-point and point-to-multi-point radio ? military radar, ew & elint ? satellite communications 10 db c onversion gain i mage r ejection: 17 db 2 lo to r f i solation: 35 db noise figure: 3 db i nput i p3: +3 dbm die s ize: 2.33 x 2.73 x 0.10 mm
mixers - i/q r eceivers - c h i p 2 2 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com conversion gain vs. temperature input p1db vs. temperature conversion gain vs. lo drive image rejection vs. temperature return loss input ip3 vs. lo drive data taken as irm with external if hybrid -10 -5 0 5 10 15 20 16 17 18 19 20 21 22 +25c +85c -55c conversion gain (db) rf frequency (ghz) 0 5 10 15 20 25 30 16 17 18 19 20 21 22 +25c +85c -55c image rejection (db) rf frequency (ghz) -10 -5 0 5 10 15 20 16 17 18 19 20 21 22 0 dbm +2 dbm +4 dbm +6 dbm +8 dbm conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 20 22 rf lo return loss (db) frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 16 17 18 19 20 21 22 +25c +85c -55c p1db (dbm) rf frequency (ghz) -10 -5 0 5 10 16 17 18 19 20 21 22 lo = 0 dbm lo = +2 dbm lo = +4 dbm lo = +6 dbm lo = +8 dbm ip3 (dbm) rf frequency (ghz) hmc570 v03.0711 gaas mmic i/q downconverter 17 - 21 ghz
mixers - i/q r eceivers - c h i p 2 2 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com isolations if bandwidth* amplitude balance vs. lo drive phase balance vs. lo drive quadrature channel data taken without if hybrid * conversion gain data taken with external if hybrid, lo frequency fxed at 8.6 ghz and rf varied -60 -50 -40 -30 -20 -10 0 10 16 17 18 19 20 21 22 isolation (db) rf frequency (ghz) 2lo/if2 2lo/if1 rf/if1 rf/if2 2lo/rf -20 -15 -10 -5 0 5 10 15 20 0.5 1 1.5 2 2.5 3 3.5 conversion gain return loss response (db) if frequency (ghz) -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 16 17 18 19 20 21 22 lo = 0 dbm lo = +2 dbm lo = +4 dbm lo = +6 dbm lo = +8 dbm amplitude balance (db) rf frequency (ghz) -5 0 5 10 15 20 16 17 18 19 20 21 22 lo = 0 dbm lo = +2 dbm lo = +4 dbm lo = +6 dbm lo = +8 dbm phase balance (degrees) rf frequency (ghz) noise figure vs. lo drive, lo frequency = 8.6 ghz 0 2 4 6 8 0.5 1 1.5 2 2.5 3 3.5 4 0 dbm +2 dbm +4 dbm +6 dbm +8 dbm conversion gain (db) if frequency (ghz) noise figure vs. lo drive, if frequency = 100 mhz 0 1 2 3 4 5 6 16 17 18 19 20 21 22 0 dbm +2 dbm +4 dbm +6 dbm +8 dbm conversion gain (db) rf frequency (ghz) hmc570 v03.0711 gaas mmic i/q downconverter 17 - 21 ghz
mixers - i/q r eceivers - c h i p 2 2 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com absolute maximum ratings r f +2 dbm lo drive + 13 dbm v dd 5.5 v c hannel temperature 175 c c ontinuous pdiss (t=85 c ) (derate 10.2 mw/c above 85c) 920 mw thermal r esistance ( r th ) (channel to package bottom) 98.3 c/w s torage temperature -65 to +150 c operating temperature -55 to +85 c es d s ensitivity (hb m ) c lass 1b e l ec t ro s tat ic se n si t ive d evice ob serve handl i ng p rec aut i on s mxn spurious outputs nlo m r f 0 1 2 3 4 0 xx 26 25 19 27 1 27 26 0 25 38 2 54 74 61 66 43 3 xx xx xx 79 76 4 xx xx xx xx xx r f = 18 ghz @ -20 dbm lo = 8.5 ghz @ +4 dbm data taken without i f hybrid all values in dbc below i f power level (1 r f -2lo = 1 ghz) hmc570 v03.0711 gaas mmic i/q downconverter 17 - 21 ghz
mixers - i/q r eceivers - c h i p 2 2 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing not es : 1. all d ime n si on s a re i n i n c h es [ mm ] 2. d ie th ic kn ess is 0.004 3. bond pad me tal i zat i on: gold 4. ba c k si d e me tal i zat i on: gold 5. ba c k si d e me tal is g r ound 6. o ver all d ie si z e 0.002 die packaging information [1] s tandard alternate gp-1 (gel pack) [2] [1] r efer to the packaging i nformation section for die packaging dimensions. [2] for alternate packaging information contact hittite m icrowave c orporation. hmc570 v03.0711 gaas mmic i/q downconverter 17 - 21 ghz
mixers - i/q r eceivers - c h i p 2 2 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com pad number function description i nterface s chematic 1 v dd r f power supply for r f lna. e xternal r f bypass capacitors are required. 2 v ddlo2 power supply for second stage of lo amplifer. e xternal r f bypass capacitors are required. 3 v ddlo power supply for frst stage of lo amplifer. e xternal r f bypass capacitors are required. 4 lo this pad is a c coupled and matched to 50 ohms. 5 i f1 this pad is d c coupled. for applications not requir - ing operation to d c , this port should be d c blocked externally using a series capacitor whose value has been chosen to pass the necessary frequency range. for operation to d c , this pad must not source /sink more than 3 ma of current or die non - function and possible die failure will result. 6 i f2 7 r f this pad is a c coupled and matched to 50 ohms. gnd the backside of the die must be connected to r f/d c ground. pad descriptions typical application hmc570 v03.0711 gaas mmic i/q downconverter 17 - 21 ghz
mixers - i/q r eceivers - c h i p 2 2 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly drawing hmc570 v03.0711 gaas mmic i/q downconverter 17 - 21 ghz
mixers - i/q r eceivers - c h i p 2 2 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see h mc general handling, m ounting, bonding note). 50 ohm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing r f to and from the chip (figure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). m icrostrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an es d protective bag for shipment. once the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow es d precautions to protect against > 250 v es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. c ure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc570 v03.0711 gaas mmic i/q downconverter 17 - 21 ghz
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